?? ?? ?? ?? S13003ADL www.jdsemi.cn r shenzhen jingdao electronic co.,ltd. bipolar junction transistor add 1-4f,3rd building,honghui industrial park, 2nd liux ian road,xinan street,baoan district,shenzhen city,p.r. c tel 0755-29799516 fax 0755-29799515 1 ? 2013 si n pn rohs compliant 1 11 1 application mainly used for 110v power fluorescent lamp electronic ballast etc 2 22 2 features intergrated antiparallel collector-emitter diode features of good high temperature high switching speed 3 33 3 package to-126d 4 44 4 electrical characteristics 4 44 4.1 .1.1 .1 absolute maximum ratings t amb = 25 unless specified parameter symbol value unit collector-base voltage v cbo 400 v collector-emittor voltage v ceo 200 v emittor- base voltage v ebo 9 v collector current i c 3.5 a ta=25 1.25 power dissipation tc=25 p tot 25 w junction temperature t j 150 storage temperature t stg -55 150 4 44 4.2 .2 .2 .2 electrical parameter t amb = 25 unless specified value parameter symbol test condition min typ max unit collector-base voltage bv cbo i c =1ma i e =0 400 v collector-emittor voltage bv ceo i c =1ma i b =0 200 v emittor-base voltage bv ebo i e =1ma i c =0 9 v collector-base cutoff current i cbo v cb =400v, i e =0 10 a collector-emittor cutoff current i ceo v ce =200v, i b =0 20 a emittor-base cutoff current i ebo v eb =9v, i c =0 10 a v ce =5v, i c =1ma 8 dc current gain h fe * v ce =5v, i c =200ma 15 35 collector-emittor saturation voltage v ce sat * i c =1a, i b =0.5a 0.6 v base-emittor saturation voltage v be sat * i c =1a, i b =0.5a 1.2 v rising time t r 1.0 s falling time t f 0.9 s storage time t s i c =250ma (ui9600) 1.5 2.5 s typical frequency f t v ce =20v,i c =20ma, f=1mhz 5 mhz : pulse test tp 300 s, ? 2% 1 base(b) 2 collector(c) 3 emitter(e) 1 vd
?? ?? ?? ?? S13003ADL www.jdsemi.cn r shenzhen jingdao electronic co.,ltd. bipolar junction transistor add 1-4f,3rd building,honghui industrial park, 2nd liux ian road,xinan street,baoan district,shenzhen city,p.r. c tel 0755-29799516 fax 0755-29799515 2 ? 2013 5 55 5. .. . characteristic curve fig1 soa dc fig2 ptot C CC C t 1 10 100 1000 0.1 1.0 i c (a) v ce (v) 0.01 50 15 10 ptot (w) tc ( c) 5 20 0 150 100 0 fig3 static characteristic fig4 h fe -i c i b =200ma i b =40ma i b =20ma i c (a) 3.0 1.5 0 v ce (v) 10 5 0 100 1 10 1ma i c (a) h fe 1 10 0.1 0.01 fig5 v cesat -i c fig6 v besat -i c 0.1 1 0.01 1 10 0.1 ic (a) ce 6 0.5 1.0 1.5 ic (a) v be sat (v) 6 1 0.1 ta=25 ta=25 ta=25 v ce =5v ta=25 i c /i b =2 ta=25 i c /i b =2 ptot - tc ptot - ta
?? ?? ?? ?? S13003ADL www.jdsemi.cn r shenzhen jingdao electronic co.,ltd. bipolar junction transistor add 1-4f,3rd building,honghui industrial park, 2nd liux ian road,xinan street,baoan district,shenzhen city,p.r. c tel 0755-29799516 fax 0755-29799515 3 ? 2013 6 66 6 package dimentions(unit mm) to toto to- -- -126d 126d 126d 126d
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